III-Nitride Nanostructures for Infrared Optoelectronics

A nucleation study of group III-nitride multifunctional nanostructures

A Stranski–Krastanow (SK)-like growth mode is shown for GaN nanostructures on AlN template layers grown by metalorganic chemical vapor deposition on sapphire substrates. A wide temperature range from 800 to 1100 1C and V/III ratios ranging from 4.5 to 3500 were explored to determine the optimal growth conditions. Silicon was used as an anti-surfactant to enhance the nucleation. Further, an acti...

Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

effect of the extrinsic and temporal carriers on radiative recombination of iii-nitride nanostructures

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

III-nitride photonic crystals

III-Nitride QD Lasers

III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/AlxGa1-xN/AlN and InxGa1-xN/ In0.04Ga0.96N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, and intensity modulation bandwidth. It is shown that GaN QDs are less sensitive to size fluctuations. Bandwidth increases with doping a...